IRFH5020TRPBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 200V 5.1A 8PQFN
$2.73
Available to order
Reference Price (USD)
4,000+
$1.06363
8,000+
$1.02870
Exquisite packaging
Discount
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| EMS | 3-7 days |
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IRFH5020TRPBF
$2.73
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 55mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 3.6W (Ta), 8.3W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PQFN (5x6)
- Package / Case: 8-PowerTDFN
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