IRF8915TRPBF
Infineon Technologies
Infineon Technologies
MOSFET 2N-CH 20V 8.9A 8SO
$0.99
Available to order
Reference Price (USD)
4,000+
$0.32905
8,000+
$0.30636
12,000+
$0.29501
28,000+
$0.28882
Exquisite packaging
Discount
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| EMS | 3-7 days |
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IRF8915TRPBF
$0.99
Product details
General specs
- Product Status: Not For New Designs
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 8.9A
- Rds On (Max) @ Id, Vgs: 18.3mOhm @ 8.9A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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