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IRF6894MTRPBF

Infineon Technologies
IRF6894MTRPBF Preview
Infineon Technologies
IRF6894 - 12V-300V N-CHANNEL POW
$0.96
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Infineon Technologies IRF6894MTRPBF is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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IRF6894MTRPBF

IRF6894MTRPBF

$0.96

Product details

Enhance your electronic designs with the IRF6894MTRPBF single MOSFET transistor from Infineon Technologies, a premium Discrete Semiconductor Product in the Transistors - FETs, MOSFETs - Single classification. This power-efficient component excels in switching applications, delivering robust performance with minimal energy loss. The IRF6894MTRPBF features an optimized gate drive characteristic that ensures smooth operation across various voltage ranges. Its compact design doesn't compromise on power handling capabilities, making it suitable for space-constrained applications. Notable advantages include superior noise immunity, stable operation under varying load conditions, and enhanced electrostatic discharge protection. These qualities make the IRF6894MTRPBF particularly valuable for medical equipment, telecommunications infrastructure, and aerospace electronics. Implement this MOSFET in your next project involving DC-DC converters, load switches, or power distribution systems. The component's reliability and efficiency will significantly improve your system's overall performance. For engineers seeking quality MOSFET solutions, the IRF6894MTRPBF represents an excellent choice. Visit our website to request a quote or submit your inquiry directly through our online portal for prompt assistance.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25 V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 160A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 1.3mOhm @ 33A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V
  • Vgs (Max): ±16V
  • Input Capacitance (Ciss) (Max) @ Vds: 4160 pF @ 13 V
  • FET Feature: Schottky Diode (Body)
  • Power Dissipation (Max): 2.1W (Ta), 54W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ MX
  • Package / Case: DirectFET™ Isometric MX

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