IRF60DM206
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 130A DIRECTFET
$3.18
Available to order
Reference Price (USD)
4,800+
$1.30030
Exquisite packaging
Discount
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| TNT | 2-6 days |
| EMS | 3-7 days |
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IRF60DM206
$3.18
Product details
General specs
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 3.7V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6530 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 96W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DirectFET™ Isometric ME
- Package / Case: DirectFET™ Isometric ME
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