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IRF200P222

Infineon Technologies
IRF200P222 Preview
Infineon Technologies
MOSFET N-CH 200V 182A TO247AC
$11.29
Available to order
Reference Price (USD)
1+
$9.18000
10+
$8.32800
400+
$6.43750
800+
$5.50938
1,200+
$5.23438
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IRF200P222

IRF200P222

$11.29

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 182A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 6.6mOhm @ 82A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 270µA
  • Gate Charge (Qg) (Max) @ Vgs: 203 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 9820 pF @ 50 V
  • FET Feature: -
  • Power Dissipation (Max): 556W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AC
  • Package / Case: TO-247-3

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