Shopping cart

Subtotal: $0.00

IRF200P222

Infineon Technologies
IRF200P222 Preview
Infineon Technologies
MOSFET N-CH 200V 182A TO247AC
$11.29
Available to order
Reference Price (USD)
1+
$9.18000
10+
$8.32800
400+
$6.43750
800+
$5.50938
1,200+
$5.23438
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Infineon Technologies IRF200P222 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
IRF200P222

IRF200P222

$11.29

Product details

Optimize your power management solutions with the IRF200P222 single MOSFET transistor from Infineon Technologies, a standout in the Discrete Semiconductor Products field (Transistors - FETs, MOSFETs - Single). This high-performance component delivers exceptional electrical characteristics designed for efficiency and reliability in demanding applications. The IRF200P222 features advanced semiconductor technology that minimizes energy loss while maximizing power handling capabilities. Its innovative design includes enhanced protection features against common electrical stresses, ensuring long-term operational stability. The MOSFET excels in applications ranging from server power supplies and network equipment to automotive electronics and industrial control systems. For renewable energy implementations, it's particularly effective in micro-inverters and charge controllers. The component also performs exceptionally in professional audio equipment and high-end power amplifiers where clean power delivery is crucial. With its combination of robust construction and electrical efficiency, the IRF200P222 provides designers with a reliable solution for their power switching needs. Ready to incorporate this high-quality MOSFET into your designs? Visit our website to submit your inquiry online our sales team will provide prompt assistance with specifications, availability, and pricing information tailored to your requirements.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 182A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 6.6mOhm @ 82A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 270µA
  • Gate Charge (Qg) (Max) @ Vgs: 203 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 9820 pF @ 50 V
  • FET Feature: -
  • Power Dissipation (Max): 556W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AC
  • Package / Case: TO-247-3

Viewed products

Fairchild Semiconductor

HUF75645S3ST_Q

$0.00 (not set)
Rectron USA

RM7N600LD

$0.00 (not set)
IXYS

IXTA24P085T

$0.00 (not set)
UnitedSiC

UJ4SC075009K4S

$0.00 (not set)
Infineon Technologies

IPB80N03S4L02ATMA1

$0.00 (not set)
Rohm Semiconductor

R6004ENDTL

$0.00 (not set)
onsemi

NTTD4401FR2G

$0.00 (not set)
Panjit International Inc.

2N7002K-AU_R1_000A2

$0.00 (not set)
Infineon Technologies

IPD30N03S2L20ATMA1

$0.00 (not set)
NXP USA Inc.

BUK7535-55A,127

$0.00 (not set)
Top