IR2301SPBF
Infineon Technologies
Infineon Technologies
IC GATE DRVR HI/LOW SIDE 8SOIC
$2.24
Available to order
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$1.86000
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$1.57368
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$1.34079
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$1.10158
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$0.91274
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IR2301SPBF
$2.24
Product details
Introducing the IR2301SPBF from Infineon Technologies, a state-of-the-art PMIC - Gate Driver designed for precision power management in advanced electronic systems. This high-performance IC delivers superior gate driving capability for power semiconductors, ensuring efficient energy conversion across various applications. The IR2301SPBF features a unique combination of high noise immunity and fast switching characteristics, making it ideal for challenging operating environments. Its intelligent control algorithms optimize switching behavior to minimize power losses while maintaining system reliability. The gate driver's robust construction withstands voltage transients and electromagnetic interference, crucial for industrial power systems. In renewable energy applications, the IR2301SPBF plays a vital role in wind turbine converters and photovoltaic inverters. For transportation systems, it provides reliable control for railway traction converters and electric bus powertrains. The component also excels in medical power supplies, where stable performance is critical for patient safety. The IR2301SPBF incorporates advanced diagnostic functions that enable predictive maintenance in industrial settings. Its configurable output stages accommodate various power device technologies, from silicon MOSFETs to wide-bandgap semiconductors. The gate driver's low quiescent current makes it suitable for battery-powered applications requiring energy efficiency. Additional features include programmable soft-start functionality and active Miller clamp protection. These capabilities make the IR2301SPBF particularly effective in high-power audio amplifiers and RF energy systems. For data acquisition systems, the gate driver ensures clean power delivery to sensitive measurement circuits. Discover the advantages of this versatile gate driver solution - our technical experts are ready to assist with your specific application requirements. Visit our website to submit your inquiry and access detailed product documentation.
General specs
- Product Status: Active
- Driven Configuration: High-Side or Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 5V ~ 20V
- Logic Voltage - VIL, VIH: 0.8V, 2.9V
- Current - Peak Output (Source, Sink): 200mA, 350mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600 V
- Rise / Fall Time (Typ): 130ns, 50ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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