IR2111PBF
Infineon Technologies
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 8DIP
$5.07
Available to order
Reference Price (USD)
1+
$2.97000
10+
$2.66600
100+
$2.18470
500+
$1.85978
1,000+
$1.56849
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IR2111PBF
$5.07
Product details
The IR2111PBF by Infineon Technologies is a high-efficiency PMIC - Gate Driver designed for demanding power electronics applications. This advanced IC provides robust gate driving capability for MOSFETs, IGBTs, and wide-bandgap devices. The IR2111PBF features intelligent control algorithms that optimize switching behavior for different load conditions. Its innovative design minimizes propagation delay while maintaining excellent noise immunity. The gate driver's adaptive dead-time control prevents shoot-through currents in half-bridge and full-bridge configurations. For data center power supplies, the IR2111PBF enables high-efficiency power conversion with precise voltage regulation. In industrial robotics, it provides reliable control for precision motion systems. The component also excels in electric vehicle charging stations, supporting fast and efficient power delivery. The IR2111PBF incorporates advanced thermal monitoring that enhances system reliability in high-temperature environments. Its configurable drive strength allows optimization for different power device characteristics. The gate driver's comprehensive protection features include desaturation detection and soft shutdown capabilities. These characteristics make it particularly suitable for aerospace power distribution systems and satellite electronics. The IR2111PBF also performs exceptionally in high-power ultrasound generators and medical imaging equipment. Its small footprint and high integration level enable compact power supply designs. The device supports multiple control interfaces for flexible system integration. With its combination of performance and protection features, the IR2111PBF is an ideal solution for critical power management applications. Contact our sales team today to discuss your specific requirements and receive expert product recommendations. Submit your inquiry online for prompt technical support and pricing information.
General specs
- Product Status: Not For New Designs
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10V ~ 20V
- Logic Voltage - VIL, VIH: 8.3V, 12.6V
- Current - Peak Output (Source, Sink): 250mA, 500mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600 V
- Rise / Fall Time (Typ): 80ns, 40ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
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