IPW65R037C6FKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 83.2A TO247-3
$21.99
Available to order
Reference Price (USD)
1+
$17.88000
30+
$15.24300
120+
$14.11267
510+
$12.22867
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IPW65R037C6FKSA1
$21.99
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 83.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 37mOhm @ 33.1A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 3.3mA
- Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7240 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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