Shopping cart

Subtotal: $0.00

IPW60R120C7XKSA1

Infineon Technologies
IPW60R120C7XKSA1 Preview
Infineon Technologies
MOSFET N-CH 600V 19A TO247-3
$2.88
Available to order
Reference Price (USD)
240+
$3.82604
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Infineon Technologies IPW60R120C7XKSA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
IPW60R120C7XKSA1

IPW60R120C7XKSA1

$2.88

Product details

Enhance your electronic designs with the IPW60R120C7XKSA1 single MOSFET transistor from Infineon Technologies, a premium Discrete Semiconductor Product in the Transistors - FETs, MOSFETs - Single classification. This power-efficient component excels in switching applications, delivering robust performance with minimal energy loss. The IPW60R120C7XKSA1 features an optimized gate drive characteristic that ensures smooth operation across various voltage ranges. Its compact design doesn't compromise on power handling capabilities, making it suitable for space-constrained applications. Notable advantages include superior noise immunity, stable operation under varying load conditions, and enhanced electrostatic discharge protection. These qualities make the IPW60R120C7XKSA1 particularly valuable for medical equipment, telecommunications infrastructure, and aerospace electronics. Implement this MOSFET in your next project involving DC-DC converters, load switches, or power distribution systems. The component's reliability and efficiency will significantly improve your system's overall performance. For engineers seeking quality MOSFET solutions, the IPW60R120C7XKSA1 represents an excellent choice. Visit our website to request a quote or submit your inquiry directly through our online portal for prompt assistance.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 390µA
  • Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
  • FET Feature: -
  • Power Dissipation (Max): 92W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3
  • Package / Case: TO-247-3

Viewed products

Toshiba Semiconductor and Storage

TJ40S04M3L(T6L1,NQ

$0.00 (not set)
Toshiba Semiconductor and Storage

TK040N65Z,S1F

$0.00 (not set)
Vishay Siliconix

IRF530PBF

$0.00 (not set)
Nexperia USA Inc.

BUK9Y153-100E,115

$0.00 (not set)
Infineon Technologies

IRFR120NPBF

$0.00 (not set)
IXYS

IXTA200N055T2-TRL

$0.00 (not set)
Vishay Siliconix

SI7414DN-T1-E3

$0.00 (not set)
STMicroelectronics

STD18N60M6

$0.00 (not set)
Alpha & Omega Semiconductor Inc.

AO4425

$0.00 (not set)
Nexperia USA Inc.

PSMN1R8-30PL,127

$0.00 (not set)
Top