IPW60R099CPFKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 31A TO247-3
$11.75
Available to order
Reference Price (USD)
1+
$9.49000
10+
$8.61000
240+
$7.18829
720+
$6.12218
1,200+
$5.41143
Exquisite packaging
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IPW60R099CPFKSA1
$11.75
Product details
General specs
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
- Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 255W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-1
- Package / Case: TO-247-3
