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IPW60R045P7XKSA1

Infineon Technologies
IPW60R045P7XKSA1 Preview
Infineon Technologies
MOSFET N-CH 650V 61A TO247-3-41
$10.37
Available to order
Reference Price (USD)
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$10.37000
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$10.2663
1000+
$10.1626
1500+
$10.0589
2000+
$9.9552
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$9.8515
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IPW60R045P7XKSA1

IPW60R045P7XKSA1

$10.37

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 22.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1.08mA
  • Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3891 pF @ 400 V
  • FET Feature: -
  • Power Dissipation (Max): 201W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3-41
  • Package / Case: TO-247-3

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