IPU80R1K0CEAKMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 800V 5.7A TO251-3
$0.75
Available to order
Reference Price (USD)
1,500+
$0.72567
Exquisite packaging
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| EMS | 3-7 days |
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IPU80R1K0CEAKMA1
$0.75
Product details
General specs
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3-341
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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