IPT111N20NFDATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 200V 96A 8HSOF
$10.55
Available to order
Reference Price (USD)
2,000+
$4.17374
Exquisite packaging
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IPT111N20NFDATMA1
$10.55
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 11.1mOhm @ 96A, 10V
- Vgs(th) (Max) @ Id: 4V @ 267µA
- Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-8-1
- Package / Case: 8-PowerSFN
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