IPT026N10N5ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 27A/202A 8HSOF
$6.26
Available to order
Reference Price (USD)
1+
$6.26000
500+
$6.1974
1000+
$6.1348
1500+
$6.0722
2000+
$6.0096
2500+
$5.947
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IPT026N10N5ATMA1
$6.26
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 202A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 2.6mOhm @ 150A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 158µA
- Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 214W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-8-1
- Package / Case: 8-PowerSFN
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