IPS80R600P7AKMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 800V 8A TO251-3
$0.83
Available to order
Reference Price (USD)
1+
$1.86000
10+
$1.64600
100+
$1.30110
500+
$1.00906
1,000+
$0.79662
Exquisite packaging
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| EMS | 3-7 days |
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IPS80R600P7AKMA1
$0.83
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 170µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3-342
- Package / Case: TO-251-3 Stub Leads, IPak
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