IPS80R1K2P7AKMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 800V 4.5A TO251-3
$0.55
Available to order
Reference Price (USD)
1+
$1.22000
10+
$1.08000
100+
$0.85380
500+
$0.66212
1,000+
$0.52272
Exquisite packaging
Discount
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| TNT | 2-6 days |
| EMS | 3-7 days |
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IPS80R1K2P7AKMA1
$0.55
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 80µA
- Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
- FET Feature: -
- Power Dissipation (Max): 37W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3-342
- Package / Case: TO-251-3 Stub Leads, IPak
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