IPS60R360PFD7SAKMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 10A TO251-3
$1.61
Available to order
Reference Price (USD)
1+
$1.61000
500+
$1.5939
1000+
$1.5778
1500+
$1.5617
2000+
$1.5456
2500+
$1.5295
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IPS60R360PFD7SAKMA1
$1.61
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 140µA
- Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 43W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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