IPP65R190E6XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 20.2A TO220-3
$4.61
Available to order
Reference Price (USD)
1+
$3.50000
10+
$3.12600
100+
$2.56300
500+
$2.07544
1,000+
$1.75036
Exquisite packaging
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| EMS | 3-7 days |
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IPP65R190E6XKSA1
$4.61
Product details
General specs
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 730µA
- Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 151W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
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