IPP60R190E6XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 20.2A TO220-3
$4.24
Available to order
Reference Price (USD)
500+
$2.10772
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IPP60R190E6XKSA1
$4.24
Product details
General specs
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 630µA
- Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 151W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
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