IPP093N06N3GXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 50A TO220-3
$1.68
Available to order
Reference Price (USD)
1+
$1.35000
10+
$1.19400
100+
$0.94330
500+
$0.73150
1,000+
$0.57750
Exquisite packaging
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| EMS | 3-7 days |
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IPP093N06N3GXKSA1
$1.68
Product details
General specs
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 9.3mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 4V @ 34µA
- Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 71W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
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