IPP052NE7N3GXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 75V 80A TO220-3
$3.36
Available to order
Reference Price (USD)
1+
$2.81000
10+
$2.55400
100+
$2.08210
500+
$1.65244
1,000+
$1.39462
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| EMS | 3-7 days |
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IPP052NE7N3GXKSA1
$3.36
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 5.2mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 91µA
- Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 37.5 V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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