IPP052N06L3GXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 80A TO220-3
$1.80
Available to order
Reference Price (USD)
1+
$1.62000
10+
$1.44000
100+
$1.15400
500+
$0.91200
1,000+
$0.73600
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IPP052N06L3GXKSA1
$1.80
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 5mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 58µA
- Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 115W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
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