IPN70R750P7SATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 700V 6.5A SOT223
$1.00
Available to order
Reference Price (USD)
3,000+
$0.31041
6,000+
$0.29128
15,000+
$0.28172
30,000+
$0.27650
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IPN70R750P7SATMA1
$1.00
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 70µA
- Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 6.7W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223
- Package / Case: TO-261-4, TO-261AA
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