Shopping cart

Subtotal: $0.00

IPLK60R1K0PFD7ATMA1

Infineon Technologies
IPLK60R1K0PFD7ATMA1 Preview
Infineon Technologies
MOSFET N-CH 600V 5.2A THIN-PAK
$1.53
Available to order
Reference Price (USD)
1+
$1.53000
500+
$1.5147
1000+
$1.4994
1500+
$1.4841
2000+
$1.4688
2500+
$1.4535
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Infineon Technologies IPLK60R1K0PFD7ATMA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
IPLK60R1K0PFD7ATMA1

IPLK60R1K0PFD7ATMA1

$1.53

Product details

Infineon Technologies's IPLK60R1K0PFD7ATMA1 stands out in the Discrete Semiconductor Products market as a top-tier single MOSFET transistor in the Transistors - FETs, MOSFETs - Single segment. This component combines cutting-edge semiconductor technology with practical design features for superior electrical performance. The IPLK60R1K0PFD7ATMA1 demonstrates exceptional characteristics including low gate charge, excellent switching behavior, and reliable overcurrent protection. These features translate to reduced power losses and extended device lifespan in your applications. The transistor's robust construction ensures stable operation in challenging environmental conditions, from temperature extremes to mechanical stress. Industrial engineers will appreciate its versatility in robotics control systems, welding equipment, and power tool applications. For consumer electronics, it's perfect for high-end audio systems, gaming consoles, and smart home devices. The IPLK60R1K0PFD7ATMA1 also performs exceptionally in renewable energy applications such as solar inverters and wind turbine controls. With its balanced performance metrics, this MOSFET provides the ideal solution for your power management needs. Ready to incorporate this high-quality component into your designs? Submit your inquiry through our user-friendly online platform for quick response and competitive pricing options.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V
  • FET Feature: -
  • Power Dissipation (Max): 31.3W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8-52
  • Package / Case: 8-PowerTDFN

Viewed products

onsemi

3LN01M-TL-H

$0.00 (not set)
Renesas Electronics America Inc

2SK3299B-S19-AY

$0.00 (not set)
Toshiba Semiconductor and Storage

TPH11006NL,LQ

$0.00 (not set)
Vishay Siliconix

SI2323DS-T1-E3

$0.00 (not set)
onsemi

SCH1335-TL-H

$0.00 (not set)
Vishay Siliconix

SIDR626EP-T1-RE3

$0.00 (not set)
Vishay Siliconix

SIS178LDN-T1-GE3

$0.00 (not set)
Infineon Technologies

IPA030N10NF2SXKSA1

$0.00 (not set)
Fairchild Semiconductor

FDD6670S

$0.00 (not set)
STMicroelectronics

STH175N4F6-6AG

$0.00 (not set)
Top