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IPL60R299CPAUMA1

Infineon Technologies
IPL60R299CPAUMA1 Preview
Infineon Technologies
MOSFET N-CH 650V 11.1A 4VSON
$1.64
Available to order
Reference Price (USD)
3,000+
$1.44000
Exquisite packaging
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IPL60R299CPAUMA1

IPL60R299CPAUMA1

$1.64

Product details

General specs

  • Product Status: Not For New Designs
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 11.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 440µA
  • Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 96W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-VSON-4
  • Package / Case: 4-PowerTSFN

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