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IPI60R190C6XKSA1

Infineon Technologies
IPI60R190C6XKSA1 Preview
Infineon Technologies
MOSFET N-CH 600V 20.2A TO262-3
$2.66
Available to order
Reference Price (USD)
500+
$1.90780
Exquisite packaging
Discount
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IPI60R190C6XKSA1

IPI60R190C6XKSA1

$2.66

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 630µA
  • Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 151W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3
  • Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA

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