IPI024N06N3GXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 120A TO262-3
$3.73
Available to order
Reference Price (USD)
1+
$3.30000
10+
$2.97600
100+
$2.39160
500+
$1.86012
1,000+
$1.54125
Exquisite packaging
Discount
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| TNT | 2-6 days |
| EMS | 3-7 days |
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IPI024N06N3GXKSA1
$3.73
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 4V @ 196µA
- Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3-1
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
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