IPD80R2K4P7ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 800V 2.5A TO252-3
$1.14
Available to order
Reference Price (USD)
2,500+
$0.40412
5,000+
$0.37922
12,500+
$0.36677
25,000+
$0.35998
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IPD80R2K4P7ATMA1
$1.14
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 40µA
- Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V
- FET Feature: -
- Power Dissipation (Max): 22W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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