IPD65R950CFDATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 3.9A TO252-3
$0.87
Available to order
Reference Price (USD)
2,500+
$0.52483
Exquisite packaging
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| EMS | 3-7 days |
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IPD65R950CFDATMA1
$0.87
Product details
General specs
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 36.7W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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