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IPD65R600C6BTMA1

Infineon Technologies
IPD65R600C6BTMA1 Preview
Infineon Technologies
MOSFET N-CH 650V 7.3A TO252-3
$0.57
Available to order
Reference Price (USD)
2,500+
$0.68361
5,000+
$0.64943
12,500+
$0.62501
Exquisite packaging
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IPD65R600C6BTMA1

IPD65R600C6BTMA1

$0.57

Product details

General specs

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 210µA
  • Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 63W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

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