IPD60R3K4CEAUMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 2.6A TO252-3
$0.71
Available to order
Reference Price (USD)
2,500+
$0.17664
Exquisite packaging
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| EMS | 3-7 days |
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IPD60R3K4CEAUMA1
$0.71
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 40µA
- Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 29W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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