Shopping cart

Subtotal: $0.00

IPD60R280PFD7SAUMA1

Infineon Technologies
IPD60R280PFD7SAUMA1 Preview
Infineon Technologies
MOSFET N-CH 650V 12A TO252-3
$1.86
Available to order
Reference Price (USD)
1+
$1.86000
500+
$1.8414
1000+
$1.8228
1500+
$1.8042
2000+
$1.7856
2500+
$1.767
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Infineon Technologies IPD60R280PFD7SAUMA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
IPD60R280PFD7SAUMA1

IPD60R280PFD7SAUMA1

$1.86

Product details

Infineon Technologies's IPD60R280PFD7SAUMA1 stands out in the Discrete Semiconductor Products market as a top-tier single MOSFET transistor in the Transistors - FETs, MOSFETs - Single segment. This component combines cutting-edge semiconductor technology with practical design features for superior electrical performance. The IPD60R280PFD7SAUMA1 demonstrates exceptional characteristics including low gate charge, excellent switching behavior, and reliable overcurrent protection. These features translate to reduced power losses and extended device lifespan in your applications. The transistor's robust construction ensures stable operation in challenging environmental conditions, from temperature extremes to mechanical stress. Industrial engineers will appreciate its versatility in robotics control systems, welding equipment, and power tool applications. For consumer electronics, it's perfect for high-end audio systems, gaming consoles, and smart home devices. The IPD60R280PFD7SAUMA1 also performs exceptionally in renewable energy applications such as solar inverters and wind turbine controls. With its balanced performance metrics, this MOSFET provides the ideal solution for your power management needs. Ready to incorporate this high-quality component into your designs? Submit your inquiry through our user-friendly online platform for quick response and competitive pricing options.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 180µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 656 pF @ 400 V
  • FET Feature: -
  • Power Dissipation (Max): 51W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3-344
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Viewed products

Vishay Siliconix

SI2371EDS-T1-BE3

$0.00 (not set)
onsemi

FDD5N50TM-WS

$0.00 (not set)
Micro Commercial Co

SI2306-TP

$0.00 (not set)
onsemi

NTD3817NT4G

$0.00 (not set)
Vishay Siliconix

SIHP11N80E-BE3

$0.00 (not set)
Renesas Electronics America Inc

RJK60S3DPP-E0#T2

$0.00 (not set)
onsemi

NVMFS5C426NLT1G

$0.00 (not set)
IXYS

IXFL132N50P3

$0.00 (not set)
Diodes Incorporated

DMN31D5UFO-7B

$0.00 (not set)
Rohm Semiconductor

RD3H200SNTL1

$0.00 (not set)
Top