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IPD50N03S2L06ATMA1

Infineon Technologies
IPD50N03S2L06ATMA1 Preview
Infineon Technologies
MOSFET N-CH 30V 50A TO252-31
$1.98
Available to order
Reference Price (USD)
2,500+
$0.53269
5,000+
$0.50605
12,500+
$0.48703
Exquisite packaging
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IPD50N03S2L06ATMA1

IPD50N03S2L06ATMA1

$1.98

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 6.4mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 85µA
  • Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 136W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3-11
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

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