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IPD30N06S4L23ATMA2

Infineon Technologies
IPD30N06S4L23ATMA2 Preview
Infineon Technologies
MOSFET N-CH 60V 30A TO252-31
$1.09
Available to order
Reference Price (USD)
2,500+
$0.30608
5,000+
$0.28497
12,500+
$0.27442
25,000+
$0.26866
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Infineon Technologies IPD30N06S4L23ATMA2 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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IPD30N06S4L23ATMA2

IPD30N06S4L23ATMA2

$1.09

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
  • Vgs (Max): ±16V
  • Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 36W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3-11
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

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