IPD26N06S2L35ATMA2
Infineon Technologies
Infineon Technologies
MOSFET N-CH 55V 30A TO252-31
$1.25
Available to order
Reference Price (USD)
2,500+
$0.29874
5,000+
$0.27814
12,500+
$0.26784
25,000+
$0.26222
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Infineon Technologies IPD26N06S2L35ATMA2 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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IPD26N06S2L35ATMA2
$1.25
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 35mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id: 2V @ 26µA
- Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 621 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 68W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3-11
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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