Shopping cart

Subtotal: $0.00

IPD096N08N3GBTMA1

Infineon Technologies
IPD096N08N3GBTMA1 Preview
Infineon Technologies
MOSFET N-CH 80V 73A TO252-3
$0.35
Available to order
Reference Price (USD)
1+
$0.35000
500+
$0.3465
1000+
$0.343
1500+
$0.3395
2000+
$0.336
2500+
$0.3325
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Infineon Technologies IPD096N08N3GBTMA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
IPD096N08N3GBTMA1

IPD096N08N3GBTMA1

$0.35

Product details

The IPD096N08N3GBTMA1 from Infineon Technologies is a high-performance single MOSFET transistor designed for efficient power management in various electronic applications. This Discrete Semiconductor Product belongs to the Transistors - FETs, MOSFETs - Single category, offering reliable switching capabilities and low power dissipation. Ideal for both industrial and consumer electronics, this component ensures optimal performance in demanding environments. With its advanced design, the IPD096N08N3GBTMA1 provides enhanced thermal stability and durability, making it a preferred choice for engineers and designers. Whether you're developing power supplies, motor controls, or audio amplifiers, this MOSFET delivers consistent results. Key features include fast switching speeds, low on-resistance, and excellent thermal characteristics. These attributes contribute to improved energy efficiency and reduced heat generation in your circuits. The IPD096N08N3GBTMA1 finds applications in automotive systems, renewable energy solutions, and industrial automation equipment. For power inverters, battery management systems, or LED drivers, this component offers the reliability you need. Upgrade your designs with the IPD096N08N3GBTMA1 and experience superior performance. Contact us today for pricing and availability submit your inquiry online to get started!

General specs

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 9.6mOhm @ 46A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 46µA
  • Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 40 V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Viewed products

IXYS

IXTH64N10L2

$0.00 (not set)
Microchip Technology

MSC040SMA120B4

$0.00 (not set)
Sanken

FKI07117

$0.00 (not set)
onsemi

NVH4L040N120SC1

$0.00 (not set)
Vishay Siliconix

SQM50N04-4M0L_GE3

$0.00 (not set)
Vishay Siliconix

SI4686DY-T1-E3

$0.00 (not set)
Infineon Technologies

IPW65R190C7XKSA1

$0.00 (not set)
onsemi

NVH4L020N120SC1

$0.00 (not set)
IXYS

IXTA1N170DHV

$0.00 (not set)
Renesas Electronics America Inc

2SK3991-ZK-E1-AZ

$0.00 (not set)
Top