IPB60R160C6ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 23.8A D2PAK
$5.14
Available to order
Reference Price (USD)
1,000+
$1.95334
2,000+
$1.85567
5,000+
$1.78591
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Infineon Technologies IPB60R160C6ATMA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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IPB60R160C6ATMA1
$5.14
Product details
General specs
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 160mOhm @ 11.3A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 750µA
- Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 176W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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