IPB60R105CFD7ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 21A TO263-3-2
$4.17
Available to order
Reference Price (USD)
1+
$4.17180
500+
$4.130082
1000+
$4.088364
1500+
$4.046646
2000+
$4.004928
2500+
$3.96321
Exquisite packaging
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| EMS | 3-7 days |
Infineon Technologies IPB60R105CFD7ATMA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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IPB60R105CFD7ATMA1
$4.17
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 105mOhm @ 9.3A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 470µA
- Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1752 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 106W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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