IPB60R055CFD7ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 38A TO263-3-2
$9.31
Available to order
Reference Price (USD)
1+
$9.31000
500+
$9.2169
1000+
$9.1238
1500+
$9.0307
2000+
$8.9376
2500+
$8.8445
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Infineon Technologies IPB60R055CFD7ATMA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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IPB60R055CFD7ATMA1
$9.31
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 55mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 900µA
- Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3194 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 178W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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