IPB180P04P4L02ATMA2
Infineon Technologies
Infineon Technologies
MOSFET P-CH 40V 180A TO263-7
$4.95
Available to order
Reference Price (USD)
1+
$4.95000
500+
$4.9005
1000+
$4.851
1500+
$4.8015
2000+
$4.752
2500+
$4.7025
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| EMS | 3-7 days |
Infineon Technologies IPB180P04P4L02ATMA2 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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IPB180P04P4L02ATMA2
$4.95
Product details
General specs
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 410µA
- Gate Charge (Qg) (Max) @ Vgs: 286 nC @ 10 V
- Vgs (Max): +5V, -16V
- Input Capacitance (Ciss) (Max) @ Vds: 18700 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-3
- Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
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