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IPB17N25S3100ATMA1

Infineon Technologies
IPB17N25S3100ATMA1 Preview
Infineon Technologies
MOSFET N-CH 250V 17A TO263-3
$2.64
Available to order
Reference Price (USD)
1,000+
$0.86688
Exquisite packaging
Discount
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TNT 2-6 days
EMS 3-7 days

Infineon Technologies IPB17N25S3100ATMA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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IPB17N25S3100ATMA1

IPB17N25S3100ATMA1

$2.64

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250 V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 54µA
  • Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 107W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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