IPB081N06L3GATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 50A D2PAK
$1.95
Available to order
Reference Price (USD)
1,000+
$0.74333
2,000+
$0.69377
5,000+
$0.65908
10,000+
$0.63430
Exquisite packaging
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| EMS | 3-7 days |
Infineon Technologies IPB081N06L3GATMA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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IPB081N06L3GATMA1
$1.95
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 8.1mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 34µA
- Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 79W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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