IPB032N10N5ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 166A TO263-7
$6.29
Available to order
Reference Price (USD)
1,000+
$3.18888
2,000+
$3.02944
Exquisite packaging
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| EMS | 3-7 days |
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IPB032N10N5ATMA1
$6.29
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 166A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 3.2mOhm @ 83A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 125µA
- Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 187W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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