IPB017N06N3GATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 180A TO263-7
$4.20
Available to order
Reference Price (USD)
1,000+
$2.58612
2,000+
$2.45682
Exquisite packaging
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| EMS | 3-7 days |
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IPB017N06N3GATMA1
$4.20
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 4V @ 196µA
- Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7
- Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
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