IPB011N04LGATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 40V 180A TO263-7
$6.25
Available to order
Reference Price (USD)
1,000+
$2.49110
2,000+
$2.36655
Exquisite packaging
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| TNT | 2-6 days |
| EMS | 3-7 days |
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IPB011N04LGATMA1
$6.25
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 2V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 346 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 29000 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-3
- Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
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