IMZA65R083M1HXKSA1
Infineon Technologies
Infineon Technologies
SILICON CARBIDE MOSFET, PG-TO247
$13.60
Available to order
Reference Price (USD)
1+
$13.60000
500+
$13.464
1000+
$13.328
1500+
$13.192
2000+
$13.056
2500+
$12.92
Exquisite packaging
Discount
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| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Infineon Technologies IMZA65R083M1HXKSA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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IMZA65R083M1HXKSA1
$13.60
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 111mOhm @ 11.2A, 18V
- Vgs(th) (Max) @ Id: 5.7V @ 3.3mA
- Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V
- Vgs (Max): +20V, -2V
- Input Capacitance (Ciss) (Max) @ Vds: 624 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 104W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-4-3
- Package / Case: TO-247-4
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