IMW120R220M1HXKSA1
Infineon Technologies
Infineon Technologies
SICFET N-CH 1.2KV 13A TO247-3
$10.45
Available to order
Reference Price (USD)
1+
$10.45000
500+
$10.3455
1000+
$10.241
1500+
$10.1365
2000+
$10.032
2500+
$9.9275
Exquisite packaging
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| EMS | 3-7 days |
Infineon Technologies IMW120R220M1HXKSA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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IMW120R220M1HXKSA1
$10.45
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Rds On (Max) @ Id, Vgs: 286mOhm @ 4A, 18V
- Vgs(th) (Max) @ Id: 5.7V @ 1.6mA
- Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 18 V
- Vgs (Max): +23V, -7V
- Input Capacitance (Ciss) (Max) @ Vds: 289 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 75W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-41
- Package / Case: TO-247-3
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