IMBG120R220M1HXTMA1
Infineon Technologies
Infineon Technologies
SICFET N-CH 1.2KV 13A TO263
$10.71
Available to order
Reference Price (USD)
1+
$10.71000
500+
$10.6029
1000+
$10.4958
1500+
$10.3887
2000+
$10.2816
2500+
$10.1745
Exquisite packaging
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| EMS | 3-7 days |
Infineon Technologies IMBG120R220M1HXTMA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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IMBG120R220M1HXTMA1
$10.71
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 294mOhm @ 4A, 18V
- Vgs(th) (Max) @ Id: 5.7V @ 1.6mA
- Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 18 V
- Vgs (Max): +18V, -15V
- Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 800 V
- FET Feature: Standard
- Power Dissipation (Max): 83W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-12
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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