IKW15N120H3FKSA1
Infineon Technologies
Infineon Technologies
IGBT TRENCH/FS 1200V 30A TO247-3
$5.77
Available to order
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$5.93000
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$5.36200
240+
$4.46158
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$3.85440
1,200+
$3.31004
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IKW15N120H3FKSA1
$5.77
Product details
The IKW15N120H3FKSA1 from Infineon Technologies is a high-performance single IGBT transistor designed for efficient power management in industrial applications. This discrete semiconductor product offers robust switching capabilities and thermal stability, making it ideal for demanding environments. With its advanced design, the IKW15N120H3FKSA1 ensures minimal energy loss and enhanced reliability, catering to a wide range of power electronics needs. Whether you're designing motor drives, power supplies, or renewable energy systems, this IGBT transistor delivers consistent performance under varying load conditions. Its compact form factor and ease of integration further simplify your design process. Explore the versatility of the IKW15N120H3FKSA1 and elevate your power management solutions today. For pricing and availability, submit an inquiry online.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
- Power - Max: 217 W
- Switching Energy: 1.55mJ
- Input Type: Standard
- Gate Charge: 75 nC
- Td (on/off) @ 25°C: 21ns/260ns
- Test Condition: 600V, 15A, 35Ohm, 15V
- Reverse Recovery Time (trr): 260 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-1
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