IKFW50N65EH5XKSA1
Infineon Technologies
Infineon Technologies
IKFW50N65EH5XKSA1
$7.14
Available to order
Reference Price (USD)
1+
$7.14000
500+
$7.0686
1000+
$6.9972
1500+
$6.9258
2000+
$6.8544
2500+
$6.783
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IKFW50N65EH5XKSA1
$7.14
Product details
Experience unparalleled power control with the IKFW50N65EH5XKSA1 single IGBT transistor by Infineon Technologies. This high-efficiency component is perfect for applications in industrial automation, renewable energy, and automotive systems. The IKFW50N65EH5XKSA1 boasts low energy loss and high switching frequency, making it a top choice for modern power electronics. Its robust design ensures long-term reliability even under high stress and temperature variations. Whether you're designing for high-power or compact systems, the IKFW50N65EH5XKSA1 offers the flexibility and performance you need. Submit your inquiry online to learn more about this advanced IGBT transistor.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 59 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
- Power - Max: 124 W
- Switching Energy: 1.2mJ (on), 400µJ (off)
- Input Type: Standard
- Gate Charge: 95 nC
- Td (on/off) @ 25°C: 20ns/138ns
- Test Condition: 400V, 40A, 15.1Ohm, 15V
- Reverse Recovery Time (trr): 52 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-HSIP247-3-2
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